发明名称 |
CdTe-base compound semiconductor single crystal for electro-optic element |
摘要 |
In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 mum or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.
|
申请公布号 |
US7002230(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20040771359 |
申请日期 |
2004.02.05 |
申请人 |
NIKKO MATERIALS CO., LTD. |
发明人 |
HIRANO RYUICHI;TANIGUCHI HIDEYUKI |
分类号 |
C30B29/10;H01L31/00;C30B11/00;C30B11/02;C30B29/48;G01R15/24;G02F1/00;G02F1/03;H01L31/0296 |
主分类号 |
C30B29/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|