PIEZOELECTRIC THIN FILM AND METHOD FOR PREPARATION THEOF, AND PIEZOELECTRIC ELEMENT HAVING THE PIEZOELECTRIC THIN FILM, INK-JET HEAD USING THE PIEZOELECTRIC ELEMENT, AND INK-JET RECORDING DEVICE HAVING THE INK-JET HEAD

摘要

A piezoelectric thin film can achieve a large piezoelectric displacement. A chemical composition of the piezoelectric thin film is expressed by Pb_1+a(Zr_xTi_1-x)O_3+a(0.2<=a<=0.6 and 0.50<=x<=0.62). The crystal structure of the piezoelectric thin film is a mixture of a perovskite columnar crystal region ( 24 ) having an ionic defect in which a portion of the constitutive elements of an oxygen ion, a titanium ion, and a zirconium ion is missing and a perovskite columnar crystal region ( 25 ) of stoichiometric composition having no ionic defect. This configuration allows a residual compressive stress in the crystal to be relaxed by the perovskite columnar crystal region ( 24 ) having an ionic defect, thus achieving a large piezoelectric displacement (displacement amount).