| 摘要 |
A method for fabricating a semiconductor device is provided to fabricate CMOSFET(complementary-metal-oxide-semiconductor field-effect-transistor) device and a memory device capable of being operated at high speed by controlling oxidation of an interface between a tungsten layer and a barrier metal. A gate insulation layer(32) is formed on a semiconductor substrate(31). A polysilicon layer(33) is formed on the gate insulation layer. A barrier metal(34) including at least a metal silicide layer is formed on the polysilicon layer. A conductive layer and a gate hard mask(36) are sequentially formed on the barrier metal. The gate hard mask, the conductive layer, the barrier metal, the polysilicon layer and the gate insulation layer are patterned to form a gate pattern. A gate re-oxidation process is performed by a selective plasma method. A heat treatment process is performed in an atmosphere of N2, N2O or vacuum.
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