发明名称 |
Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths |
摘要 |
One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.
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申请公布号 |
US7001813(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20030349007 |
申请日期 |
2003.01.22 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
MANFRA MICHAEL JAMES;WEIMANN NILS GUENTER |
分类号 |
H01L21/336;C30B29/40;H01L21/20;H01L21/205;H01L21/316;H01L29/20;H01L29/737;H01L29/778;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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