发明名称 |
Method of forming partial reverse active mask |
摘要 |
A method of forming a partial reverse active mask. A mask pattern comprising a large active region pattern with an original dimension and a small active region pattern is provided. The large active region pattern and the small active region pattern are shrunk until the small active region pattern disappears. The large active region pattern enlarged to a dimension slightly smaller than the original dimension.
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申请公布号 |
US7001713(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20010991466 |
申请日期 |
2001.11.21 |
申请人 |
UNITED MICROELECTRONICS, CORP. |
发明人 |
CHEN COMING;WU JUAN-YUAN;LUR WATER |
分类号 |
G03F7/00;G03F7/36;H01L21/3105;H01L21/762 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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