发明名称 Method of forming partial reverse active mask
摘要 A method of forming a partial reverse active mask. A mask pattern comprising a large active region pattern with an original dimension and a small active region pattern is provided. The large active region pattern and the small active region pattern are shrunk until the small active region pattern disappears. The large active region pattern enlarged to a dimension slightly smaller than the original dimension.
申请公布号 US7001713(B2) 申请公布日期 2006.02.21
申请号 US20010991466 申请日期 2001.11.21
申请人 UNITED MICROELECTRONICS, CORP. 发明人 CHEN COMING;WU JUAN-YUAN;LUR WATER
分类号 G03F7/00;G03F7/36;H01L21/3105;H01L21/762 主分类号 G03F7/00
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