| 摘要 |
PROBLEM TO BE SOLVED: To provide an inorganic thin film pattern forming method capable of depositing an inorganic thin film on a surface of an insulating base material with high adhesion reliability and high pattern accuracy, and applicable to a hybrid integrated circuit pattern. SOLUTION: The inorganic thin film pattern forming method comprises a step (1) of forming a resin layer 2 containing metal ions by coating a resin composition containing metal ions on a part for forming an inorganic thin film pattern of an insulating base material 1, and a step (2) of depositing an inorganic thin film 3 by depositing the metal ions on the surface of the resin layer 2 as a metal, or a metal oxide or a semi-conductor. The inorganic thin film pattern is formed by these steps. COPYRIGHT: (C)2007,JPO&INPIT
|
