| 摘要 |
A semiconductor storage device has an array of memories, which store data and which are arranged in a matrix, and can read the data in response to address designation. The semiconductor storage device includes word line pairs, bit line pairs, and resistance portions. The resistance portions are each connected across two word lines of the corresponding word line pair and two bit lines of the corresponding bit line at the corresponding intersection thereof. Each resistance portion includes resistors having differential values in both the word line direction and the bit line direction. This arrangement allows the semiconductor storage device to read data with accuracy at high speed and allows the semiconductor storage device to be miniaturized at low cost.
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