| 发明名称 |
Production method of semiconductor device |
| 摘要 |
After a thin first conductive film is formed on a barrier film having a crystal structure, a second conductive film is formed on the first conductive film. Thereafter, the first conductive film and the second conductive film are heated such that the first and second conductive films are integrated to form a third conductive film.
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| 申请公布号 |
US7001841(B2) |
申请公布日期 |
2006.02.21 |
| 申请号 |
US20030643980 |
申请日期 |
2003.08.20 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIRAO SHUJI;HARADA TAKESHI;NII KAZUSHI;KISHIDA TAKENOBU;IKEDA ATSUSHI;TSUJI KAZUNORI |
| 分类号 |
H01L21/44;H01L21/768 |
主分类号 |
H01L21/44 |
| 代理机构 |
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代理人 |
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| 主权项 |
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