发明名称 |
Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same |
摘要 |
A method of fabricating a dual bit dielectric memory cell structure on a silicon substrate includes implanting buried bit lines within the substrate and fabricating a layered island on the surface of the substrate between the buried bit lines. The island has a perimeter defining a gate region, and comprises a tunnel dielectric layer on the surface of the silicon on insulator wafer, an isolation barrier dielectric layer on the surface of the tunnel dielectric layer, a top dielectric layer on the surface of the isolation barrier dielectric layer, and a polysilicon gate on the surface of the top dielectric layer. A portion of the isolation barrier dielectric layer is removed to form an undercut region within the gate region and a charge trapping material is deposited within the undercut region.
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申请公布号 |
US7001807(B1) |
申请公布日期 |
2006.02.21 |
申请号 |
US20040997345 |
申请日期 |
2004.11.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ZHENG WEI;RANDOLPH MARK W.;TRIPSAS NICHOLAS H.;KRIVOKAPIC ZORAN;THOMAS JACK F.;RAMSBEY MARK T. |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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地址 |
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