发明名称 |
Interconnect with multiple layers of conductive material with grain boundary between the layers |
摘要 |
An interconnect structure is formed with a plurality of layers of a conductive material with a grain boundary between any two adjacent layers of the conductive material. Such grain boundaries between layers of conductive material act as shunt by-pass paths for migration of atoms of the conductive material to minimize migration of atoms of the conductive material along the interface between a dielectric passivation or capping layer and the interconnect structure. When the interconnect structure is a via structure, each of the layers of the conductive material and each of the grain boundary are formed to be perpendicular to a direction of current flow through the via structure. Such grain boundaries formed between the plurality of layers of conductive material in the via structure minimize charge carrier wind-force along the direction of current flow through the via structure to further minimize electromigration failure of the via structure.
|
申请公布号 |
US7001840(B1) |
申请公布日期 |
2006.02.21 |
申请号 |
US20030361332 |
申请日期 |
2003.02.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TRAN MINH QUOC;YOU LU;WANG FEI;OKADA LYNNE |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|