发明名称 |
Photomask having a transparency-adjusting layer, method of manufacturing the photomask, and exposure method using the photomask |
摘要 |
A photomask for use in photolithography has substrate, a main pattern at one side of the substrate, and a transparency-adjusting layer at the other side of the substrate. The transparency-adjusting layer has a characteristic that allows it to change the intensity of the illumination incident on the main pattern during the exposure process accordingly. In manufacturing the photomask, a first exposure process is carried out on a wafer using just the substrate and main pattern. The critical dimensions of elements of the pattern formed on the wafer as a result of the first exposure process are measured. Differences between these critical dimensions and a reference critical dimension are then used in designing a layout of the transparency-adjusting layer in which the characteristic of the layer is varied to compensate for such differences. |
申请公布号 |
US7001697(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20030623616 |
申请日期 |
2003.07.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JONG-RAK;CHOI SEONG-WOON;YEO GI-SUNG;JANG SUNG-HOON |
分类号 |
G01F9/00;G03F1/08;G02B5/18;G02B27/09;G02B27/46;G03F1/14;G03F1/26;G03F1/60;G03F1/68;H01L21/027 |
主分类号 |
G01F9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|