发明名称 |
Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor device |
摘要 |
Hardmasks and fabrication methods are presented for producing ferroelectric capacitors in a semiconductor device, wherein a hardmask comprising aluminum oxide or strontium tantalum oxide is formed above an upper capacitor electrode material, and capacitor electrode and ferroelectric layers are etched to define a ferroelectric capacitor stack.
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申请公布号 |
US7001821(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20030705039 |
申请日期 |
2003.11.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
AGGARWAL SANJEEV;TAYLOR KELLY J.;MOISE THEODORE S. |
分类号 |
H01L21/20;H01L21/00;H01L21/02;H01L21/285;H01L21/311;H01L21/3213;H01L21/8246;H01L27/115 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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