发明名称 Integrated semiconductor memory circuit and method of manufacturing the same
摘要 An integrated semiconductor circuit, having active components lying in mutually adjoining wells of a respective first and second conduction type, wherein the active components respectively are associated with substrate contacts lying in direct proximity to an edge bounding the mutually adjoining wells, is disclosed. Preferably, structures of the active components other than the contacts are arranged to lie further away from the edge and the circuit/layout structures are not mirror-symmetrical with respect to a center line of the circuit chip.
申请公布号 US7002222(B2) 申请公布日期 2006.02.21
申请号 US20040753407 申请日期 2004.01.09
申请人 INFINEON TECHNOLOGIES AG 发明人 SOMMER MICHAEL BERNHARD
分类号 H01L29/76;H01L21/8238;H01L21/8242;H01L27/02;H01L27/108;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L29/76
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