发明名称 Speeding up the power-up procedure for low power RAM
摘要 An internal power system for a low power memory chip is described that provides a large capacity internal power source during chip power up and during an active state whereby memory operations are carried out. A memory chip standby state allows reduced chip power where the large capacity power source is turned off, and the memory chip internal voltages are provided by a small capacity power source. Switching between the standby and active states of the low power memory chip is accomplished by turning on and off a standby signal. The internal and external chip voltages are monitored during chip power up to insure that predetermined voltage levels have been reached before turning off the large capacity power source and placing the chip into a standby state.
申请公布号 US7002870(B2) 申请公布日期 2006.02.21
申请号 US20040861162 申请日期 2004.06.04
申请人 ETRON TECHNOLOGY, INC. 发明人 HSU JEN-SHOU
分类号 G11C7/00;G11C7/20;G11C19/08 主分类号 G11C7/00
代理机构 代理人
主权项
地址