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发明名称
Method for fabricating trench isolation in semiconductor device
摘要
申请公布号
KR100552847(B1)
申请公布日期
2006.02.21
申请号
KR20030098310
申请日期
2003.12.27
申请人
发明人
分类号
H01L21/762
主分类号
H01L21/762
代理机构
代理人
主权项
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