| 发明名称 |
Cross point resistive memory array |
| 摘要 |
A cross point resistive memory array has a first array of cells arranged generally in a plane. Each of the memory cells includes a memory storage element and is coupled to a diode. The diode junction extends transversely to the plane of the array of memory cells.
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| 申请公布号 |
US7002197(B2) |
申请公布日期 |
2006.02.21 |
| 申请号 |
US20040814094 |
申请日期 |
2004.03.30 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
PERNER FREDERICK A.;SHARMA MANISH |
| 分类号 |
H01L29/76;G11C7/02;G11C11/16;H01L27/22;H01L27/24 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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