| 摘要 |
A polishing liquid for CMP processes is characterized by comprising an abrasive, an aqueous solvent and an additive, and by containing 15 weight% or more of abrasive particles based on the weight of the polishing liquid which particles have particle diameters of 20-80 nm. A polishing method using such a polishing liquid is also disclosed. The polishing liquid is suitable for surface planarization process of a device wafer which is provided with at least a silicon oxide film, and stably exhibits excellent polishing characteristics such as planarization properties, low scratch properties, high cleaning properties, and the like. Consequently, the polishing liquid is most suitable for surface planarization process of semiconductor device and magnetic heads in semiconductor industry which have interlayer insulating films or interdevice isolation films and surface planarization process of substrates for liquid crystal displays.
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