| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a logic LSI having a structure controlled in the mechanical stress of trench element separation, and a memory element of one transistor plus one capacitor type which is manufactured by using the manufacturing process of the logic LSI are loaded in a mixed state, and also to provide a method of manufacturing the device. <P>SOLUTION: The semiconductor device is provided with: a semiconductor substrate 10 in which trenches 16a and 16b are formed; an element separating film 32a having a liner film containing a silicon nitride film 20 formed in the trench 16a and a silicon oxide film-based insulating film; and another element separating film 32b buried in the bottom of the trench 16b. The device is also provided with an impurity diffusing area 40 formed in the upper side wall of the trench 16b as a first electrode, a capacitor dielectric film 43 composed of a silicon oxide film-based insulating film, and a capacitor having a second electrode 46. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
