| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching process using a selective polymer mask formed by CO gas on a photoresist pattern. SOLUTION: The dry etching process comprises a step of disposing a semiconductor substrate where the photoresist pattern is formed on an etched membranous object in a reactor, a step of selectively depositing polymer on an upper section of the photoresist pattern by supplying the CO gas into the reactor to form a polymer layer, and a step of etching the etched membranous object with the photoresist pattern and polymer layer as the masks. This allows the system to realize high resolution and etch the etched membranous portion into an excellent profile, and allows the system to etch the etched membranous portion into the excellent profile regardless of the thickness of an initial thin photoresist. COPYRIGHT: (C)2006,JPO&NCIPI
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