| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device having a groove wiring or a connecting hole excellent in electrical property and reliability. SOLUTION: A resist film 75b having a predetermined circuit pattern is formed on an interlayer insulating film 74, and a via 78a is formed in the interlayer insulating film 74 by performing an etching treatment using the resist film 75 as a mask. And the side of the via 78a is made to be recovered from a damage caused by the etching treatment by processing the side of the via 78a formed in the interlayer insulating film 74 by this etching treatment with a silylation treatment. After that, a metal is embedded into the via 78a, and its surface is planalized. COPYRIGHT: (C)2006,JPO&NCIPI
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