发明名称 P TYPE SEMICONDUCTOR CARBON NANOTUBE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.</p>
申请公布号 KR20060014979(A) 申请公布日期 2006.02.16
申请号 KR20040063765 申请日期 2004.08.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, NOE JUNG;LEE, SUNG HOON
分类号 H01L21/336 主分类号 H01L21/336
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