发明名称 |
P TYPE SEMICONDUCTOR CARBON NANOTUBE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.</p> |
申请公布号 |
KR20060014979(A) |
申请公布日期 |
2006.02.16 |
申请号 |
KR20040063765 |
申请日期 |
2004.08.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, NOE JUNG;LEE, SUNG HOON |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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