| 摘要 |
<P>PROBLEM TO BE SOLVED: To grow a crystal in a nanometer level on a base material having a different lattice constant while stably controlling the position of a growth point. <P>SOLUTION: After a top end of a metal needle 23a is positioned on a sample S, the temperature of the top end of the metal needle 23a is raised to produce an alloy melt of the sample S and the metal. By bringing an organic metal compound in a vapor phase into contact with the alloy melt while the alloy melt is produced, the organic metal compound as an element is incorporated into the alloy melt by catalytic reaction to induce supersaturation of the structural element of the organic metal compound in the alloy melt, and the excess element is precipitated on the interface between the alloy melt and the sample S to grow a wire-like single crystal. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
