| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the efficiency of a charge pump circuit while reducing a pattern area of the entire of a charge pump circuit. <P>SOLUTION: Both first and second charge transfer MOS transistors M1(N) and M2(N) are N channel transistors. In order to perform switching operation of the second charge transfer MOS transistor M2(N), one more stage of pumping packet is additionally provided. In order to attain a low on resistance by elevating the VGS (gate-source voltage) when the second charge transfer MOS transistor M2(N) is turned on, output voltage B(2VDD) is supplied through a second diode D2 as the power supply of a second clock driver CD2 for driving the pumping packet at the time of steady operation. At the time of starting the charge pump circuit, an input voltage VDD is supplied through a first diode D1 as the power supply of the second clock driver CD2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
