| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture of a dual-damascene wiring of a fine electronic element using a basic material diffusion barrier film. SOLUTION: A manufacture of a dual-damascene wiring is provided, comprising the steps of: filling a viahole with a filler material of HSQ system expressed by (RSiO<SB>3/2</SB>)x(HSiO<SB>3/2</SB>)y, where x+y=1, satisfying 0≤x≤y≤1, and R is alkyl of C4-C24, alkenyl of C4-C2, alkylene oxide of C8-C24, substituted hydrocarbon of C4-C2, nonsubstituted hydrocarbon of C1-C4, and substituted hydrocarbon of C1-C4; thereafter forming a trench where wiring is formed, by connecting with a via by partially etching the filler material that fills the via and an interlayer insulating film; removing the filler material remained in the via; and completing a dual-damascene wiring by filling the trench and the via with a wiring substance. COPYRIGHT: (C)2006,JPO&NCIPI
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