| 摘要 |
PROBLEM TO BE SOLVED: To suppress arrival of hydrogen to a ferroelectric layer through a via hole. SOLUTION: A ferroelectric capacitor is provided with a lower electrode, the ferroelectric layer formed on the lower electrode, an upper electrode which is positioned on the ferroelectric layer and is formed by laminating metal films, and metal oxide films by four or above layers in total and an insulating film formed on the upper electrode. The metal oxide films are included in the upper electrode by two or above layers. In the upper electrode, an Ir oxide film and an Ir film can be alternately laminated or a Pt oxide film and a Pt film can alternately be laminated. In the upper electrode; the Pt oxide film, the Pt film, the Ir oxide film, and the Ir film can be laminated in this order; or the Pt film, the Pt oxide film, the Ir oxide film, and the Ir film can be laminated in this order. COPYRIGHT: (C)2006,JPO&NCIPI
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