| 摘要 |
PROBLEM TO BE SOLVED: To provide a high quality insulating film that has a lower permittivity than conventional SiO<SB>2</SB>and perfectly prevents leak current exceeding 10<SP>-8</SP>A/cm<SP>2</SP>when 20 V is applied. SOLUTION: This film is a material for forming films through chemical crystal growth from vapor. It comprises one or multiple kinds of chemical compounds to be selected from groups belonging to the following group [I] and one or multiple kinds of chemical compounds to be selected among groups belonging to the following group [II]. Where, [I] contains HSi(OCH<SB>3</SB>)<SB>3</SB>, H<SB>2</SB>Si(OCH<SB>3</SB>)<SB>2</SB>and HSi(CH<SB>3</SB>)(OCH<SB>3</SB>)<SB>2</SB>while [II] contains (CH<SB>2</SB>=CH)Si(OCH<SB>3</SB>)<SB>3</SB>, (CH<SB>2</SB>=CH)Si(OC<SB>2</SB>H<SB>5</SB>)<SB>3</SB>, (CH<SB>2</SB>=CH)Si(CH<SB>3</SB>)(OCH<SB>3</SB>)<SB>2</SB>, (CH<SB>2</SB>=CH)Si(CH<SB>3</SB>)(OC<SB>2</SB>H<SB>5</SB>)<SB>2</SB>, (CH<SB>2</SB>=CH)Si(CH<SB>3</SB>)<SB>2</SB>(OCH<SB>3</SB>) and (CH<SB>2</SB>=CH)Si(CH<SB>3</SB>)<SB>2</SB>(OC<SB>2</SB>H<SB>5</SB>). COPYRIGHT: (C)2006,JPO&NCIPI
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