| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that junction leakage current occurs between the collector and the base in the conventional semiconductor device. SOLUTION: In the semiconductor device, the side wall 41 of a trench 11 is formed in the step structure. A silicon oxide film 32 and a TEOS film 33 are formed between the upper end 40 of the trench 11 and a base extraction electrode 9 to prevent them from abutting against each other. Due to this structure, the concentration of thermal stress on the upper end 40 of the trench 11 can be eased, resulting in suppressing the occurrence of crystal defects from the upper end 40 of the trench 11. Even if crystal defects occur, the crystal defects are kept away from the passage of the base current and thereby the junction leakage current can be reduced between the collector and the base. COPYRIGHT: (C)2006,JPO&NCIPI
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