NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor laser element wherein a stimulation threshold value is stably low and a drive current is not secularly increased even when the element is continuously driven at a high output of 100 mW or over. SOLUTION: A band gap energy Ecl of a lower clad layer (102), the band gap energy Enl of a lower adjacent layer (104), the band gap energy Ew of the well layer of a quantum well active layer (105), the band gap energy Eb of a barrier layer, the band gap energy Enu of an upper adjacent layer (106), the band gap energy E1 of a first layer (107), the band gap energy E2 of a second layer (108), the band gap energy E3 of a third layer (109), and the band gap energy Ecu of an upper clad layer (110) hold a relation of Ew < Ecl, Enl, Eb, Enu, E1, E2, Ecu