| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a structure suitable for fining, is readily manufactured, and comprises a ferrodielectric memory of less constraint on a usable material; and to provide its manufacturing method. SOLUTION: The semiconductor device which solves the problem has a field effect transistor formed in the surface region of a semiconductor substrate, a trench-type ferrodielectric capacitor formed inside the semiconductor substrate in one source/drain of the field effect type transistor and one electrode thereof is connected to the source/drain, and a wiring which is formed in the semiconductor substrate and is connected to the other electrode of the trench-type ferrodielectric capacitor. COPYRIGHT: (C)2006,JPO&NCIPI
|
