发明名称 METHOD FOR MANUFACTURING DIELECTRIC THIN FILM CAPACITOR
摘要 PROBLEM TO BE SOLVED: To efficiently manufacture a dielectric thin film capacitor without having a bad influence on a capacitor, and to easily reuse a substrate material separated from the capacitor. SOLUTION: An Si substrate 14 formed with the capacitor 11 and a first conductive portion 6, and a ceramic substrate 2 formed with through vias 1a and 1b, are aligned and laid on top each other so that the resin surfaces (a first resin layer 20 on the Si substrate side and a second resin layer 25 on the ceramic substrate 2 side) may be in contact with other, and then are crimped to fabricate a bonded body 26 (h). Thereafter, a heating/cooling process is performed on the bonded body 26 to give it a temperature change, causing interfacial separation to occur between an adhesion layer 16 on the Si substrate 14 side and a first electrode film 9 on the ceramic substrate 2 side, to separate the Si substrate 14 from the capacitor 11. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006049510(A) 申请公布日期 2006.02.16
申请号 JP20040227110 申请日期 2004.08.03
申请人 MURATA MFG CO LTD 发明人 TAKESHIMA YUTAKA;NOMURA MASANOBU
分类号 H01L27/04;H01L21/822;H01L21/8246;H01L27/105 主分类号 H01L27/04
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