| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method which inhibits a damage to a device, and has high accuracy, which is attained by development of a plasma treatment method using a gas free of a greenhouse effect in order to realize the global environmental preservation, and the plasma process of high performance. SOLUTION: The plasma treatment method is to supply a treatment gas containing a fluorine gas (F<SB>2</SB>) into a plasma producing chamber, to produce plasma by repeating applying/its stopping of a high frequency electric field alternately, and to irradiate the plasma to a substrate to carry out the substrate treatment. Additionally, a neutral particle beam is produced by extracting a negative ion or a positive ion from the plasma separately individually, or alternately by extracting only a negative ion selectively to neutralize the plasma, and the substrate treatment may be carried out by irradiating the neutral particle beam to the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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