| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element having an element isolation film in a trench structure that prevents formation of voids due to a high aspect ratio while controlling leakage current associated with decrease in spaces between elements. SOLUTION: The element includes a semiconductor substrate, trenches for defining first active regions formed in predetermined areas of the semiconductor substrate, first element isolation films filled in the trenches, second element isolation films formed on the first element isolation films, and second active regions on the first active regions buried in spaces between the second element isolation films adjacent to each other. COPYRIGHT: (C)2006,JPO&NCIPI
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