发明名称 Circuit device manufacturing method
摘要 A circuit device manufacturing method is provided, wherein the adhesion of an overcoat resin, formed on a conductive wiring layer, to a sealing resin layer is improved by irradiating plasma onto the overcoat resin. A first conductive film 23 A and a second conductive film 23 B, which are laminated with an interlayer insulating layer 22 interposed in between, are formed. By selectively removing the first conductive film, a first conductive wiring layer 12 A is formed and the first conductive wiring layer is covered with an overcoat resin 18 . Overcoat resin 18 is irradiated with plasma to roughen its top surface. A sealing resin layer 17 is formed so as to cover the top surface of the roughened overcoat resin 18 and circuit elements 13.
申请公布号 US2006032049(A1) 申请公布日期 2006.02.16
申请号 US20050207293 申请日期 2005.08.19
申请人 SANYO ELECTRIC CO. LTD. 发明人 USUI RYOSUKE;MIZUHARA HIDEKI;IGARASHI YUSUKE;SAKAMOTO NORIAKI
分类号 H01R43/00;H05K3/28;H01L21/48;H01L23/12;H01L23/31;H01L23/498;H05K3/38 主分类号 H01R43/00
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