| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor substrate where a practical thick film can be formed with high productivity by efficiently removing a nitride semiconductor polycrystal which adheres incidentally to a portion except the substrate in a reactor when the nitride semiconductor substrate is produced by a vapor phase growing method. SOLUTION: The crystal of a nitride semiconductor is grown on a basic substrate by introducing a gas for forming the nitride semiconductor into the reactor. Thereafter, the nitride semiconductor polycrystal is removed by introducing an etching gas into the reactor by 2% or more to a total gas flow introduced into the reactor. COPYRIGHT: (C)2008,JPO&INPIT
|
