| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of surely insulating an electrode. <P>SOLUTION: The electrode 31 of the plasma processing device is extended in a direction perpendicular to the direction extending from a plasma space 30a to a base material W. A metallic frame member 22L is arranged at a side opposite to the side where the plasma space 30a of the electrode 31 is formed. Insulating spacers 70, 75 are intermittently arranged between the electrode 31 and the frame member 22L in a longitudinal direction of the electrode 31. An electrically grounded conduction member 50 is interposed between the electrode 31 and an arrangement position of the base material W, and an L-shaped second side part 72 of the spacer 70 is interposed between the electrode 31 and the conduction member 50. An insulation space is formed between adjacent spacers 70, 75. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
