发明名称 |
Nonvolatile semiconductor memory and method for fabricating the same |
摘要 |
A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.
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申请公布号 |
US7326993(B2) |
申请公布日期 |
2008.02.05 |
申请号 |
US20040890132 |
申请日期 |
2004.07.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KAJIMOTO MINORI;NOGUCHI MITSUHIRO;GODA AKIRA |
分类号 |
H01L21/28;H01L29/788;H01L21/768;H01L21/8246;H01L21/8247;H01L23/522;H01L27/115;H01L29/76;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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