| 摘要 |
<P>PROBLEM TO BE SOLVED: To control enlargement of an SRAM cell formation area, and stabilize its operation. <P>SOLUTION: On the gate electrode 33 of an SRAM cell's access transistor Q5, a contact 45 is formed that is connected to a word line. The contact 45 penetrates through an element separating insulation film 14 into an SOI layer 13. A driver transistor Q1's body region and a first access transistor Q5's body region are electrically connected with each other via the SOI layer 13 lying below the element separating insulation film 14. Accordingly, the access transistor Q5 is formed into a DTMOS structure where its gate electrode and body region are connected by the contact 45, which is further electrically connected to the body region of the first driver transistor Q1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
