| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode in which forward voltage drop can be lowered while ensuring breakdown voltage surely. SOLUTION: Breakdown voltage can be enhanced by forming a heavily doped P type guard ring region 5 having a depth of 2μm and an impurity concentration of 1×10<SP>16</SP>/cm<SP>3</SP>-6×10<SP>17</SP>/cm<SP>3</SP>in a lightly doped N type epitaxial layer 2. Not only the breakdown voltage is enhanced but also static electricity surge resistance can be ensured by further forming a heavily doped P type region 8 having a depth of 0.5μm and an impurity concentration of 1×10<SP>20</SP>/cm<SP>3</SP>-6×10<SP>21</SP>/cm<SP>3</SP>on the surface of the guard ring region 5. COPYRIGHT: (C)2006,JPO&NCIPI |
