| 摘要 |
PROBLEM TO BE SOLVED: To provide a partial SOI substrate which can produce no void while eliminating the need for epitaxially growing a continuous part between an active layer and a bulk layer, and also to provide a method for manufacturing the substrate. SOLUTION: A SIMOX substrate 10 having a window 14a formed in part of silicon oxide film 14 is annealed in a hydrogen gas atmosphere at a high temperature. At this time, a continuous part of a buried oxide film 13 between an active layer 11 and a bulk layer 12 is extinguished by heat diffusion of the oxygen included in the buried oxide film 13 to form a partial SOI structure. As a result, when the partial SOI structure is formed, the need for epitaxially growing the continuous part can be eliminated between the active layer 11 and the bulk layer 12. In addition, since the partial SOI structure is based on bonding, no void can be generated in the interior of a partial SOI substrate 20. COPYRIGHT: (C)2006,JPO&NCIPI
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