| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CMP slurry, a CMP that uses the CMP slurry, and a method of forming metal wiring that uses the CMP slurry. <P>SOLUTION: The CMP slurry contains a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. By using the CMP slurry in the CMP and the formation of the metal wiring, defects formed on the surface of the metal film can be decreased, or protected, and reliable metal wiring can be formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
