SILICON-INSULATOR THIN-FILM STRUCTURES FOR OPTICAL MODULATORS AND METHODS OF MANUFACTURE
摘要
The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a high mobility silicon layer can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer can be provided by using selective epitaxial growth and extended lateral overgrowth thereof.
申请公布号
WO2006017847(A2)
申请公布日期
2006.02.16
申请号
WO2005US28391
申请日期
2005.08.10
申请人
HONEYWELL INTERNATIONAL INC.?;KEYSER, THOMAS;LARSEN, BRADLEY, J.;YUE, CHEISAN, J.
发明人
KEYSER, THOMAS;LARSEN, BRADLEY, J.;YUE, CHEISAN, J.