VERTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce an ON-resistance without sacrificing a breakdown strength. SOLUTION: A vertical diode is formed by laminating a p+-type anode region 42 coming into contact with an anode electrode 52, a drift region 30, and an n+-type cathode region 22 coming into contact with a cathode electrode 12. The drift region 30 contains a lamination structure of an n--type first semiconductor layer 36 having a low impurity density, an n+-type first semiconductor layer 34 having a high impurity density, and an n--type third semiconductor layer 32 having a low impurity density, from a side of a p+-type anode region 42. COPYRIGHT: (C)2006,JPO&NCIPI