| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can make it possible to achieve a desired thickness and nitrogen profile by using a plasma nitriding process. SOLUTION: In an element region, a second silicon nitride film pattern 11 having a plurality of openings 9 and 10 of different sizes is formed. Then, a basic film of the second silicon nitride film pattern 11 is removed by wet etching to form a hollow portion between the second silicon nitride film pattern 11 and a silicon substrate 1. After forming a third silicon oxide film on top of the silicon substrate 1 by film formation via the second silicon nitride film pattern 11, the third silicon oxide film is plasma-nitrided via the second silicon nitride film pattern 11. Consequently, a silicon oxide nitride film having a different thickness and nitrogen profile can be formed on the silicon substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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