| 摘要 |
<p>A method for correcting bias of a semiconductor device is provided to avoid a pattern distortion phenomenon by using hybrid OPC(optical proximity effect). A first CD(critical dimension) is measured on the active region of a silicon substrate. A second CD is measured on an isolation layer by which the silicon substrate is divided into the active region and an inactive region. A rule table is made of data with respect to a pattern shape by using the first and second CD's. The second CD is corrected by the first CD by using a difference between the first and second CD's. The pattern shape of the rule table can be at least one of a line, a space, a pitch, a dot pattern and a hole pattern.</p> |
