发明名称 |
Cross point array cell with series connected semiconductor diode and phase change storage media |
摘要 |
A storage cell that may be a memory cell, and an integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell includes a series connected diode and storage media formed between a top an bottom electrode. The diode is a vertical diode and may be formed in a semiconductor nanowire.
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申请公布号 |
US2006034116(A1) |
申请公布日期 |
2006.02.16 |
申请号 |
US20040918101 |
申请日期 |
2004.08.13 |
申请人 |
LAM CHUNG H;WONG HON-SUM P |
发明人 |
LAM CHUNG H.;WONG HON-SUM P. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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