Semiconductor device and method for fabricating the same

摘要

The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrode 22 n and a dummy electrode 22 p; forming a metal film 32 on the dummy electrode 22 p; conducting a thermal treatment at a first temperature to substitute the dummy electrode 22 n with an electrode 34 a of a material containing the constituent material of the metal film 32 ; forming a metal film 36 on the dummy electrode 22 n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode 34 a and the metal film 36 does not take place, to substitute the second dummy electrode with an electrode 34 b of a material containing the constituent material of the metal film 36.