Method for etching mesa isolation in antimony-based compound semiconductor structures

摘要

Antimony-based semiconductor devices are formed over a substrate structure ( 10 ) that includes an antimony-based buffer layer ( 24 ) and an antimony-based buffer cap ( 26 ). Multiple epitaxial layers ( 30 - 42 ) formed over the substrate structure ( 10 ) are dry etched to form device mesas ( 12 ) and the buffer cap ( 26 ) provides a desirably smooth mesa floor and electrical isolation around the mesas.