发明名称 Metallkontaktstruktur für eine Solarzelle und Herstellungsverfahren
摘要 <p>In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.</p>
申请公布号 DE112004000600(T5) 申请公布日期 2006.02.16
申请号 DE20041100600 申请日期 2004.03.03
申请人 SUNPOWER CORP., SUNNYVALE 发明人 MULLIGAN, WILLIAM P.;CUDZINOVIC, MICHAEL J.;PASS, THOMAS;SMITH, DAVID;SWANSON, RICHARD M.
分类号 H01L31/00;H01L31/0224;H01L31/068;H01L31/18 主分类号 H01L31/00
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