发明名称 |
Metallkontaktstruktur für eine Solarzelle und Herstellungsverfahren |
摘要 |
<p>In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.</p> |
申请公布号 |
DE112004000600(T5) |
申请公布日期 |
2006.02.16 |
申请号 |
DE20041100600 |
申请日期 |
2004.03.03 |
申请人 |
SUNPOWER CORP., SUNNYVALE |
发明人 |
MULLIGAN, WILLIAM P.;CUDZINOVIC, MICHAEL J.;PASS, THOMAS;SMITH, DAVID;SWANSON, RICHARD M. |
分类号 |
H01L31/00;H01L31/0224;H01L31/068;H01L31/18 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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