Fabricating gate all around transistor device, for use as GM type semiconductor device, involves subsequentially removing sacrificial layer and forming gate insulating layer and gate electrode in opening

摘要

Fabricating gate all around transistor device involves forming opening and sidewall spacers on active region, forming sacrificial layer at sidewall spacers, removing upper portions of sidewall spacers, forming channel region between opposing sidewalls of active layer, on sacrificial layer and sidewall spacers, subsequentially removing sacrificial layer, and forming gate insulating layer and gate electrode in opening around channel region. Fabricating gate all around transistor device comprises: (a) providing substrate (10) with active region in the form of strip extending lengthwise in first direction between two isolation regions; (b) forming opening in the active region between the first and second isolation regions; (c) forming sidewall spacers (22) within the opening on opposing sidewalls of the active region; (d) forming sacrificial layer at the bottom of the opening between the sidewall spacers; (e) removing upper portions of the sidewall spacers to expose at least upper portions of the opposing sidewalls of the active region while leaving the residual portions of the sidewall spacers at the bottom of the opening; (f) forming the channel region between the exposed portions of the opposing sidewalls of the active layer and over the sacrificial layer and residual portions of the sidewall spacers subsequentially removing the sacrificial layer; and (g) subsequently forming gate insulating layer and gate electrode in the opening around the channel region.