发明名称 |
SPUTTERING TARGET FOR THIN FILM FORMATION, DIELECTRIC THIN FILM, OPTICAL DISK, AND METHOD FOR PRODUCING THE DIELECTRIC THIN FILM |
摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the diffusion of water and oxygen from a dielectric protective film by eliminating free oxygen from a thin oxide film without detriment to the characteristics of the film as a dielectric protective film. <P>SOLUTION: A thin film of a mixed oxide comprising niobium oxide and silicon oxide or comprising niobium oxide and titanium oxide is used as a dielectric material for forming a dielectric protective film for an optical disk etc. In a desirable example, a target comprising niobium oxide as a main component and 1 to 30 wt.% of silicon oxide is used in the formation of an oxide thin film by sputtering. In this case, the oxide thin film is formed desirably in a nitrogen atmosphere. A nitrogen-containing oxide thin film is made by sputtering an oxygen-deficient target in the presence of a small amount of added nitrogen. By this way, it is possible to make a thin film having low reducibility and consequent high barrier properties as well as properties equivalent to those of a perfect oxide. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006045666(A) |
申请公布日期 |
2006.02.16 |
申请号 |
JP20050156967 |
申请日期 |
2005.05.30 |
申请人 |
PIONEER ELECTRONIC CORP;DEPT CORP |
发明人 |
HOSODA YASUO;HIGUCHI TAKANOBU;UENO TAKASHI |
分类号 |
C23C14/34;C23C14/08;G11B7/254;G11B7/257;G11B7/26;G11B11/105;H01J11/22;H01J11/34;H01J11/38;H01J11/40 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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